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	<updated>2026-05-02T02:47:11Z</updated>
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	<entry>
		<id>https://en.formulasearchengine.com/index.php?title=Unique_negative_dimension&amp;diff=9500</id>
		<title>Unique negative dimension</title>
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		<updated>2012-02-04T13:26:58Z</updated>

		<summary type="html">&lt;p&gt;93.135.33.97: Subcat&lt;/p&gt;
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&lt;div&gt;The &#039;&#039;&#039;saturation current&#039;&#039;&#039; or, more accurately, the &#039;&#039;&#039;reverse saturation current&#039;&#039;&#039; is that part of the reverse current in a [[semiconductor]] [[diode]] caused by diffusion of minority [[charge carrier|carriers]] from the neutral regions to the [[depletion region]]. This current is almost independent of the reverse voltage. (Steadman 1993, 459)&lt;br /&gt;
&lt;br /&gt;
&#039;&#039;I&#039;&#039;&amp;lt;sub&amp;gt;S&amp;lt;/sub&amp;gt;, the reverse bias saturation current for an ideal p–n [[diode]] is given by (Schubert 2006, 61):&lt;br /&gt;
&lt;br /&gt;
&amp;lt;math&amp;gt;I_\mathrm{S} = e A \left( \sqrt{\frac{D_\mathrm{p}}{\tau_\mathrm{p}}} \frac{n_\mathrm{i}^2}{N_\mathrm{D}} + \sqrt{\frac{D_\mathrm{n}}{\tau_\mathrm{n}}} \frac{n_\mathrm{i}^2}{N_\mathrm{A}} \right),\,&amp;lt;/math&amp;gt;&lt;br /&gt;
&lt;br /&gt;
where &lt;br /&gt;
:&#039;&#039;I&#039;&#039;&amp;lt;sub&amp;gt;S&amp;lt;/sub&amp;gt; is the reverse bias saturation current,&lt;br /&gt;
:&#039;&#039;e&#039;&#039; is [[elementary charge]]&lt;br /&gt;
:&#039;&#039;A&#039;&#039; is the cross-sectional area&lt;br /&gt;
:&#039;&#039;D&#039;&#039;&amp;lt;sub&amp;gt;p,n&amp;lt;/sub&amp;gt; are the [[diffusion coefficient]]s of holes and electrons, respectively,&lt;br /&gt;
:&#039;&#039;N&#039;&#039;&amp;lt;sub&amp;gt;D,A&amp;lt;/sub&amp;gt; are the donor and acceptor concentrations at the n side and p side, respectively,&lt;br /&gt;
:&#039;&#039;n&#039;&#039;&amp;lt;sub&amp;gt;i&amp;lt;/sub&amp;gt; is the intrinsic carrier concentration in the semiconductor material,&lt;br /&gt;
:&amp;lt;math&amp;gt;\tau_\mathrm{p,n}&amp;lt;/math&amp;gt; are the carrier lifetimes of holes and electrons, respectively.&lt;br /&gt;
&lt;br /&gt;
Note that the saturation current is &#039;&#039;not&#039;&#039; a constant for a given device; it [http://www.pveducation.org/pvcdrom/solar-cell-operation/effect-of-temperature varies] with temperature; this variance is the dominant term in the temperature coefficient for a diode. A common rule of thumb is that it doubles for every 10°C rise in temperature. (Bogart 1986, 40)&lt;br /&gt;
&lt;br /&gt;
==References==&lt;br /&gt;
* Steadman, J. W. (1993). &amp;quot;Electronics&amp;quot; in R. C. Dorf, &#039;&#039;The Electrical Engineering Handbook.&#039;&#039; Boca Raton: CRC Press.&lt;br /&gt;
&lt;br /&gt;
* Schubert, E. Fred. (2006). &amp;quot;LED basics: Electrical properties&amp;quot; in &#039;&#039;Light-Emitting Diodes&#039;&#039; : Cambridge Press.&lt;br /&gt;
&lt;br /&gt;
*     Bogart, F. Theodore Jr. (1986). &amp;quot;Electronic Devices and Circuits&amp;quot; : Merill Publishing Company&lt;br /&gt;
&lt;br /&gt;
{{DEFAULTSORT:Saturation Current}}&lt;br /&gt;
[[Category:Diodes]]&lt;/div&gt;</summary>
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		<id>https://en.formulasearchengine.com/index.php?title=Witness_set&amp;diff=245154</id>
		<title>Witness set</title>
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		<updated>2012-02-04T13:24:22Z</updated>

		<summary type="html">&lt;p&gt;93.135.33.97: Subcat&lt;/p&gt;
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&lt;div&gt;Emilia Shryock is my title but you can contact me anything you like. She is a librarian but she&#039;s usually needed her personal company. California is exactly where I&#039;ve usually been living and I love every day residing right here. Body developing is one of the things I love most.&amp;lt;br&amp;gt;&amp;lt;br&amp;gt;My web-site ... over the counter std test ([http://youulike.com/blogs/114396/390615/items-to-know-when-confronted-wi link webpage])&lt;/div&gt;</summary>
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